Description:
Two-dimensional (2D) semiconductors are seen as a future candidate to replace Si for further scaling of physical gate lengths or to work alone with Si in transistors, sensors, and memory. 2D transition metal chalcogenide (TMD) such as WSe2 and MoS2 is one of the 2D semiconductors widely used in optoelectronic research because a combination of its large bandgap and high effective mass suppresses a high off-state leakage usually seen on Si and other traditional bulk transistors. Additionally, their direct bandgap, tunable colors for emissions, and valley properties can be applied to innovative photonic research and applications. In this course, we will start with a brief introduction to 2D semiconductors in terms of basic properties and the usefulness of their clean surface and ultrathin body. Next, we will go over several topics centered on 2D TMD, including the synthesis by metalorganic chemical vapor deposition, van der Waals epitaxy, doping and implantation, dielectric integration, air stability, and devices. The end of this course will discuss the roadmap and challenges for the utilization of 2D materials in CMOS technology in the near future.
- Understand the basic properties and optoelectronic applications of TMD.
- Have the knowledge of synthesis, characterization, and integration of 2D materials
- Learn the mechanisms of epitaxy, cation and anion doping, and MOCVD of 2D TMD.
- Identify issues and challenges for device scaling of 2D semiconductors from material engineering perspectives